STP11NM60 Series

N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh II Power MOSFET in a TO-220 package

Catalog

N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh II Power MOSFET in a TO-220 package

Part	FET Type	Supplier Device Package	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STP11NM60	N-Channel	TO-220	MOSFET (Metal Oxide)	150 °C	-65 °C	5 V	TO-220-3	25 V	10 V	1000 pF	650 V	450 mOhm	Through Hole	30 nC	11 A

Catalog

N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh II Power MOSFET in a TO-220 package

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.