STL7N10F7 Series

N-channel 100 V, 0.027 Ohm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package

Catalog

N-channel 100 V, 0.027 Ohm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Technology
STMicroelectronics STL7N10F7	35 mOhm	PowerFlat™ (3.3x3.3)	N-Channel	10 V	20 V	100 V	2.9 W 50 W	4.5 V	14 nC	Surface Mount	8-PowerVDFN	7 A	920 pF	150 °C	-55 °C	MOSFET (Metal Oxide)

Catalog

N-channel 100 V, 0.027 Ohm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package

Description

This device utilizes the 7thgeneration of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.