STL300N4LF8N-channel logic level 40 V, 1.0 mOhm max., 304 A, STripFET F8 Power MOSFET in a PowerFLAT 5x6 package | Single FETs, MOSFETs | 1 | Active | The STL300N4LF8 is a 40 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.
It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. |
| Discrete Semiconductor Products | 1 | Active | |
STL31N65M5N-channel 650 V, 0.135 Ohm typ., 15 A MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package | Transistors | 1 | Active | This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. |
STL320N4LF8N-channel enhancement mode logic level 40 V, 0.8 mOhm max., 360 A, STripFET F8 Power MOSFET in a PowerFLAT 5x6 package | Transistors | 1 | Active | This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure.
It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. |
STL325N4LF8AGAutomotive N-Channel enhancement mode logic level 40 V, 0.75 mOhm max., 373 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 | FETs, MOSFETs | 1 | Active | This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure.
It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. |
STL33N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package | Single | 2 | Active | The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. |
STL33N60DM2N-channel 600 V, 0.115 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package | Discrete Semiconductor Products | 1 | Active | This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STL33N60DM6N-channel 600 V, 125 mOhm typ., 21 A MDmesh DM6 Power MOSFET in PowerFLAT 8x8 HV package | FETs, MOSFETs | 1 | Active | This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. |
STL33N65M2N-channel 650 V, 0.124 Ohm typ., 20 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package | Single FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
| FETs, MOSFETs | 1 | Obsolete | |
