STL45P3LLH6 Series

P-channel -30 V, 11 mOhm typ., -45 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package

Catalog

P-channel -30 V, 11 mOhm typ., -45 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs
STMicroelectronics STL45P3LLH6	24 nC	20 V	175 °C	-55 °C	45 A	4.5 V 10 V	2615 pF	MOSFET (Metal Oxide)	30 V	4.8 W 75 W	P-Channel	1 V	Surface Mount	8-PowerVDFN	PowerFlat™ (5x6)	13 mOhm

Catalog

P-channel -30 V, 11 mOhm typ., -45 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package

Description

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.