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STMicroelectronics

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(7415)

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Part	Category	Description
STMicroelectronics STEVAL-ISA068V1Obsolete	Development Boards Kits Programmers	EVAL BOARD FOR ST1S32
STMicroelectronics 74VCXHQ163245TTRObsolete	Integrated Circuits (ICs)	IC TRANSLATION TXRX 2.7V 48TSSOP
STMicroelectronics EV-VNQ9050LAJ	Development Boards Kits Programmers	VNQ9050LAJ EVALUATION BOARD
STMicroelectronics LSM303DLHCTRObsolete	Sensors Transducers	IMU ACCEL/MAG 3-AXIS I2C 14LGA
STMicroelectronics M93C56-WMN6TObsolete	Integrated Circuits (ICs)	EEPROM SERIAL-MICROWIRE 2K-BIT 256 X 8/128 X 16 3.3V/5V 8-PIN SO N T/R
STMicroelectronics STM32U375CGT6	Integrated Circuits (ICs)	STM32U
STMicroelectronics TS831-3IZObsolete	Integrated Circuits (ICs)	IC SUPERVISOR 1 CHANNEL TO92-3
STMicroelectronics STMPE1208SQTRObsolete	Integrated Circuits (ICs)	IC I/O EXPANDER I2C 12B 40QFN
STMicroelectronics STM32L1-MAGNETObsolete	Development Boards Kits Programmers	IAR EXPERIMENT STM32 L1 EVAL BRD
STMicroelectronics VNB35N07Obsolete	Integrated Circuits (ICs)	IC PWR DRIVER N-CHAN 1:1 D2PAK

Series	Category	# Parts	Status	Description

STL36Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package	FET, MOSFET Arrays	3	Active	The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
STL38Automotive-grade N-channel 60 V, 24 mOhm typ., 10 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package	FET, MOSFET Arrays	2	Active	This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
STL3N65M2	Single FETs, MOSFETs	1	Active
STL3NK40N-channel 400 V, 4.5 Ohm typ., 0.43 A SuperMESH(TM) Power MOSFET in a PowerFLAT 5x5 package	Transistors	1	Active	This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
STL3NM60NN-channel 600 V, 1.5 Ohm typ., 2.2 A MDmesh II Power MOSFET in a PowerFLAT 3.3x3.3 HV package	Single FETs, MOSFETs	1	Active	This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
STL4	Single FETs, MOSFETs	2	Active
STL40Automotive-grade dual N-channel 30 V, 0.016 Ohm typ., 11 A STripFET H5 Power MOSFET in a PowerFLAT 5x6 double island package	Single FETs, MOSFETs	2	Active	This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
STL40N75LF3N-channel 75 V, 16 mOhm typ., 10 A STripFET(TM) III Power MOSFET in PowerFLAT(TM) 5x6 package	FETs, MOSFETs	1	Active	This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance.
STL42P4LLF6P-channel 40 V, 0.0155 Ohm typ., 42 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package	Discrete Semiconductor Products	1	Active	This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.
STL42P6LLF6P-channel 60 V, 0.023 Ohm typ., 42 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package	Discrete Semiconductor Products	1	Active	This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.