STMicroelectronics

The 1N5819U Schottky diode is ESCC qualified. It is housed in a surface mount hermetically sealed ceramic LCC-2B package whose footprint is fully compatible with industry standard as D5B. Its full planar technology allows superior performances and high reliability up to 150 °C junction temperature. This diode is ESCC qualified, which makes it eligible for use in space programs. It is typically used in switching mode power supplies, high frequency DC-to-DC converters or low voltage step-down chopper drive to perform secondary rectification, redundancy OR-Ing, free wheeling diode or reverse polarity protection.

The 1N5822U Schottky diode is ESCC qualified. It is housed in a surface mount hermetically sealed ceramic LCC-2B package whose footprint is fully compatible with industry standard as D5B. Its full planar technology allows superior performances and high reliability up to 150 °C junction temperature. This diode is ESCC qualified, which makes it eligible for use in space programs. It is typically used in switching mode power supplies, high frequency DC-to-DC converters or low voltage step-down chopper drive to perform secondary rectification, redundancy OR-Ing, free wheeling diode or reverse polarity protection.

The STEVAL-1PS02B evaluation board demonstrates a smart converter design able to deliver up to 400 mA output current from a 1.8 V to 5.5 V input, with a dynamically adjustable1.8 V to 2.5 V output voltage. The board features the ST1PS02BQTR nano-quiescent miniaturized synchronous step-down converter which implements enhanced peak current control (PCC) and advanced design circuitry to minimize quiescent current. The device embeds a controlled load switch to supply a subsystem with same voltage rail. The board demonstrates how highly efficient conversion can be achieved with just the ST1PS02BQTR, a 2.2 µH inductor and two small capacitors. The board highlights key application benefits made possible by the ST1PS02BQTR, including high efficiency and small PCB size and thickness, and is ideal for power management solutions in wearable applications and fitness accessories, personal tracking monitors, smart watches, sports bands, energy harvesting, wireless sensors, industrial sensors, portable low power devices, single cell Li-Ion battery applications, and Bluetooth®low energy and Zigbee applications. The device used on this board is supplied in the thin TQFN12 (2.0x1.7 mm) package, but other packages are also available.

The 2N2222AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5201/002 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.

The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/001 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.

The 2N5154HR is a bipolar transistor able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID). Qualified as per ESCC 5203/010 specification and available in SMD.5 and TO-257 hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for power suppliers, battery switch and linear bias supply circuits. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.

The device is a NPN transistor manufactured by using planar technology resulting in rugged high performance devices. The complementary PNP type is 2SB772.

The device is manufactured in planar technology with "base island" layout. The resulting transistor shows high gain performance coupled with low saturation voltage.