Catalog
Low voltage NPN power transistor
Description
AI
The device is manufactured in planar technology with "base island" layout. The resulting transistor shows high gain performance coupled with low saturation voltage.
Beta
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Low voltage NPN power transistor
Low voltage NPN power transistor
| Part | Vce Saturation (Max) @ Ib, Ic | Operating Temperature | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Package / Case | Mounting Type | Transistor Type | Power - Max [Max] | Supplier Device Package | Current - Collector (Ic) (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 1.2 V | 150 °C | 100 | TO-220-3 | Through Hole | NPN | 40 W | TO-220 | 3 A | 300 µA | 60 V |