STMicroelectronics

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

The SD2931-12MR is a gold metallized N-channel MOS field-effect RF power transistor. Electrically identical to the standard SD2931 MOSFET, it is used for 50 V DC large signal applications up to 230 MHz. The SD2931-12MR is mechanically compatible with the SD2931 but offers better thermal capability (25% lower thermal resistance), representing the best-in-class in transistors for ISM applications, where reliability and ruggedness are critical factors. The SD2931-12MR benefits from the latest generation of environmentally designed packing, ruggedized against cyclic high moisture operation and severe storage conditions.

The SD2941-10 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use in 28 V to 50 V dc large signal applications up to 230 MHz. It offers 25% lower RDS(on)than the industry standard, with 20% higher PSATthan ST's SD2931-10 device. The SD2941-10 is housed in the low thermal M174 non-pedestal package, offering 25% lower thermal resistance than the industry standard, thus rendering it the "best-in-class" transistor for ISM applications, where reliability and ruggedness are critical factor.

The SD4933MR is an N-channel MOS field-effect RF power transistor. It is intended for use in 50 V ISM applications up to 100 MHz. The SD4933MR benefits from the latest generation of environmentally designed packaging, ruggedized against cyclic high moisture operating and severe storage conditions.

The SD56060 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. It is designed for high gain and broadband performance operating in common source mode at 28 V.