SATEL-VL53L4CXBreakout board embedding the VL53L4CX Time-of-Flight sensor with extended range measurement | Development Boards, Kits, Programmers | 1 | Active | The SATEL-VL53L4CX package includes two breakout boards, which can be easily integrated into the customer's devices.
The PCB section that embeds the VL53L4CX module is perforated. The developers can then break off the mini-PCB and use it in a 3.3 V supply application via flying wires.
This makes it easier to integrate the SATEL-VL53L4CX breakout boards into the development and evaluation devices thanks to their small size. |
SATEL-VL53L8Breakout board based on the VL53L8 series Time-of-Flight sensors | Sensor Evaluation Boards | 1 | Active | The SATEL-VL53L8 package includes two breakout boards, which can be easily integrated into the customer's devices.
The PCB section that embeds the VL53L8 series Time-of-Flight sensor module is perforated. The developers can then break off the mini-PCB and use it in a 3.3 V supply application via flying wires.
This makes it easier to integrate the SATEL-VL53L8 breakout boards into the development and evaluation devices, thanks to their small size.
The breakout boards support two products: VL53L8CX and VL53L8CH.
The VL53L8CX is an 8x8 multizone, ToF ranging sensor, which enhances performance under ambient light with a reduced power consumption. Based on STMicroelectronics FlightSense technology, the sensor is designed to provide accurate ranging up to 400 cm with a 65° diagonal FoV.
The VL53L8CH is the perfect Time-of-Flight sensor enabling AI applications, with enhanced performance under ambient light with a wide 65° diagonal FoV. The compact and normalized histogram (CNH) innovative data output is specially designed for artificial intelligence (AI) applications requiring multizone raw data from a high performance multizone ToF sensor. |
SCLT3-8BQ7Protected digital input termination with serialized state transfer | Power Management (PMIC) | 2 | Active | The SCLT3 series is an octal industrial digital input IC which drastically reduces the power dissipation of the digital input modules. Its current-sinking inputs can be configured for Type 1, Type 2, or Type 3 inputs as per IEC 61131-2 with few external components.
The SCLT3 series includes a serial interface which translates, conditions and serializes the data to CMOS-compatible signals through SPI. Combining its daisy-chaining capability with its accurate current limitation, the SCLT3 series enhances the I/O module’s density by cutting the power dissipation and reducing the number of optocouplers.
The SCLT3 series can be evaluated thanks to the STEVAL-IFP030V1 evaluation board. For detailed application guidelines refer to AN2846. |
SCT011H75G3AGAutomotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an H2PAK-7 package | Transistors | 1 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. |
SCT012H90G3AGAutomotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package | Discrete Semiconductor Products | 1 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. |
SCT040W120G3-4AGAutomotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package | Transistors | 1 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. |
SCT060HU75G3AGAutomotive-grade silicon carbide Power MOSFET 750 V, 58 mOhm typ., 30 A in an HU3PAK package | Transistors | 1 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. |
| Discrete Semiconductor Products | 1 | Obsolete | |
SCT20N120HSilicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an H2PAK-2 package | FETs, MOSFETs | 1 | Active | This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. |
SCT30N120HSilicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an H2PAK-2 package | Discrete Semiconductor Products | 1 | Active | This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. |
