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STMicroelectronics
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SCT50N120Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package | FETs, MOSFETs | 1 | Active | This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. |
SCTH40N120G2V-7Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an H2PAK-7 package | FETs, MOSFETs | 1 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. |
SCTH70N120G2V-7Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 90 A in an H2PAK-7 package | Transistors | 1 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. |
SCTH90N65G2V-7Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package | Transistors | 1 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. |
SCTL35N65G2VSilicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package | FETs, MOSFETs | 1 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. |
SCTL90N65G2VSilicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package | Single FETs, MOSFETs | 1 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. |
SCTW40N120G2VSilicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package | Single FETs, MOSFETs | 1 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. |
SCTWA35N65G2VSilicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 long leads package | Transistors | 2 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. |
SCTWA70N120G2V-4Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package | Single FETs, MOSFETs | 1 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. |
SCTWA90N65G2VSilicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247 long leads package | Transistors | 1 | Active | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. |
| Part | Category | Description |
|---|---|---|
STMicroelectronics EMIF09-SD01F3Obsolete | Filters | FILTER RC(PI) 40 OHM/20PF SMD |
 STMicroelectronics | Integrated Circuits (ICs) | STM32 DYNAMIC EFFICIENCY MCU WITH BAM, HIGH-PERFORMANCE AND DSP WITH FPU, ARM CORTEX-M4 MCU WITH 1 MBYTE OF FLASH MEMORY, 100 MHZ CPU, ART ACCELERATOR, DFSDM |
 STMicroelectronics | Integrated Circuits (ICs) | 32-BIT POWER ARCHITECTURE MCU FOR AUTOMOTIVE BODY AND GATEWAY APPLICATIONS |
STMicroelectronics | Integrated Circuits (ICs) | MCU 32-BIT E200Z0H RISC 128KB FLASH 3.3V/5V AUTOMOTIVE AEC-Q100 64-PIN LQFP T/R |
 STMicroelectronics | Development Boards Kits Programmers | DEMONSTRATION BOARD FOR SINGLE CHANNEL OP-AMP IN SO8 PACKAGE |
 STMicroelectronics LDLN025J30RLTB | Integrated Circuits (ICs) | IC REG LINEAR 3V 250MA 4FLIPCHIP |
 STMicroelectronics ST25RU3993-EVALObsolete | Development Boards Kits Programmers | ST25RU3993 READER IC EVALUATION BOARD |
 STMicroelectronics | Integrated Circuits (ICs) | ARM-BASED 32-BIT MCU+FPU, 84MHZ, 128KB FLASH, 49-PIN WLCSP, -40 TO 85°C T/R |
 STMicroelectronics STP12NM60NObsolete | Discrete Semiconductor Products | MOSFET N-CH 600V 10A TO220AB |
 STMicroelectronics VND1NV04Obsolete | Integrated Circuits (ICs) | IC PWR DRIVER N-CHANNEL 1:1 DPAK |