SCT4036KWA1200V, 40A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET | Discrete Semiconductor Products | 1 | Active | SCT4036KWA is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier. |
SCT4045750V, 45mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET | Transistors | 2 | Active | SCT4045DR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier. |
SCT4045DEHR750V, 34A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive | Single FETs, MOSFETs | 1 | Active | AEC-Q101 qualified automotive grade product. SCT4045DEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier. |
SCT4045DRHR750V, 34A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive | Discrete Semiconductor Products | 1 | Active | AEC-Q101 qualified automotive grade product. SCT4045DRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier. |
SCT4045DW7750V, 31A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET | Discrete Semiconductor Products | 1 | Active | SCT4045DW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier. |
SCT4045DW7HR750V, 31A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive | FETs, MOSFETs | 1 | Active | AEC-Q101 qualified automotive grade product. SCT4045DW7HR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier. |
SCT4045DWA750V, 31A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET | Transistors | 1 | Active | SCT4045DWA is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier. |
SCT4045DWAHR750V, 31A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive | Single FETs, MOSFETs | 1 | Active | AEC-Q101 qualified automotive grade product. SCT4045DWAHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier. |
SCT40621200V, 62mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET | Transistors | 2 | Active | SCT4062KR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier. |
SCT4062KEHR1200V, 26A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive | Transistors | 1 | Active | AEC-Q101 qualified automotive grade product. SCT4062KEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier. |