SCT4036KEHR Series

1200V, 43A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Catalog

1200V, 43A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Qualification	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Grade	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Vgs (Max) [Min]	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)
Rohm Semiconductor SCT4036KEHRC11	AEC-Q101	175 °C	43 A	91 nC	4.8 V	176 W	Automotive	N-Channel	Through Hole	1.2 kV	21 V	-4 V	TO-247N	TO-247-3	2335 pF	47 mOhm	18 V

Catalog

1200V, 43A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Description

AEC-Q101 qualified automotive grade product. SCT4036KEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.