SCT4036 Series

1200V, 36mΩ, 3-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET

Catalog

1200V, 36mΩ, 3-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET

Part	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Vgs (Max) [Min]	Rds On (Max) @ Id, Vgs	Mounting Type
Rohm Semiconductor SCT4036KEC11	N-Channel	4.8 V	1.2 kV	TO-247-3	18 V	91 nC	175 °C	TO-247N	2335 pF	176 W	43 A	21 V	-4 V	47 mOhm	Through Hole
Rohm Semiconductor SCT4036KRC15	N-Channel	4.8 V	1.2 kV	TO-247-4	18 V	91 nC	175 °C	TO-247-4L	2335 pF	176 W	43 A	21 V	-4 V	47 mOhm	Through Hole

Catalog

1200V, 36mΩ, 3-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET

Description

SCT4036KE is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.