FDWS9508L_F085 Series

P-Channel PowerTrench® MOSFET -40V, -80A, 4.9mΩ

Catalog

P-Channel PowerTrench® MOSFET -40V, -80A, 4.9mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Grade	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Package / Case	Mounting Type	Vgs (Max)	Qualification
ON Semiconductor FDWS9508L_F085	107 nC	4.5 V 10 V	3 V	40 V	214 W	-55 °C	175 ░C	P-Channel	Automotive	4.9 mOhm	4840 pF	8-PQFN (5x6)	MOSFET (Metal Oxide)	8-PowerTDFN	Surface Mount	16 V	AEC-Q101
ON Semiconductor FDWS9508L-F085	107 nC	4.5 V 10 V	3 V	40 V	214 W	-55 °C	175 ░C	P-Channel	Automotive	4.9 mOhm	4840 pF	8-PQFN (5x6)	MOSFET (Metal Oxide)	8-PowerTDFN	Surface Mount	16 V	AEC-Q101

P-Channel PowerTrench® MOSFET -40V, -80A, 4.9mΩ

• Typical RDS(on) = 3.6 mΩ at VGS = - 10V, ID = - 80 A

• Typical Qg(tot) = 82 nC at VGS = - 10V, ID = - 80 A

• UIS Capability

• RoHS Compliant

• Qualified to AEC Q101

• Wettable flanks for automatic optical inspection (AOI)

P-Channel PowerTrench®MOSFET -40 V, -80 A, 4.9 mΩ