FDY1002PZ Series

Dual P-Channel (-1.5 V) Specified PowerTrench® MOSFET -20V, -0.83A, 0.5Ω

Catalog

Dual P-Channel (-1.5 V) Specified PowerTrench® MOSFET -20V, -0.83A, 0.5Ω

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Power - Max [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Feature
ON Semiconductor FDY1002PZ	830 mA	MOSFET (Metal Oxide)	446 mW	Surface Mount	135 pF	20 V	SOT-563F	2 P-Channel	3.1 nC	-55 °C	150 °C	SOT-563 SOT-666	1 V	500 mOhm	Logic Level Gate

Dual P-Channel (-1.5 V) Specified PowerTrench® MOSFET -20V, -0.83A, 0.5Ω

• Max rDS(on)= 0.5 Ω at VGS= –4.5 V, ID= –0.83 A

• Max rDS(on)= 0.7 Ω at VGS =–2.5 V, ID= –0.70 A

• Max rDS(on)= 1.2 Ω at VGS= –1.8 V, ID= –0.43 A

• Max rDS(on)= 1.8 Ω at VGS= –1.5 V, ID= –0.36 A

• HBM ESD protection level = 1400 V (Note 3)

• RoHS Compliant

This Dual P-Channel MOSFET has been designed using an advanced Power Trench process to optimize the rDS(on)@VGS= –1.5 V.