FDWS5360L_F085 Series

N-Channel Power Trench® MOSFET 60V, 60A, 8.5mΩ

Catalog

N-Channel Power Trench® MOSFET 60V, 60A, 8.5mΩ

Part	Grade	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Qualification	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology
ON Semiconductor FDWS5360L-F085	Automotive	Power56	3 V	-55 °C	175 ░C	4.5 V 10 V	8.5 mOhm	60 A	AEC-Q101	N-Channel	72 nC	60 V	8-PowerVDFN	150 W	Surface Mount	3695 pF	20 V	MOSFET (Metal Oxide)

N-Channel Power Trench® MOSFET 60V, 60A, 8.5mΩ

• Typ rDS(on)= 6.5mΩ at VGS= 10V, ID= 60A

• Typ Qg(tot)= 64nC at VGS= 10V, ID= 60A

• UIS Capability

• RoHS Compliant

• Qualified to AEC Q101

• Wettable flanks for automatic optical inspection (AOI)

N-Channel Power Trench®MOSFET 60 V, 60 A, 8.5 mΩ