FDT458P Series

P-Channel PowerTrench® MOSFET,30V, -3.4A, 130mΩ

Catalog

P-Channel PowerTrench® MOSFET,30V, -3.4A, 130mΩ

Part	Power Dissipation (Max) [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDT458P	3 W	Surface Mount	130 mOhm	205 pF	4.5 V 10 V	P-Channel	3 V	3.5 nC	SOT-223-4	TO-261-4 TO-261AA	MOSFET (Metal Oxide)	-55 °C	150 °C	30 V	20 V	3.4 A

Catalog

P-Channel PowerTrench® MOSFET,30V, -3.4A, 130mΩ

Key Features

-3.4 A, -30 V

• RDS(ON)= 130 mΩ @ VGS= 10 V

• RDS(ON)= 200 mΩ @ VGS= 4.5 V

• Fast switching speed

• Low gate charge (2.5nC typical)

• High performance trench technology for extremelylow RDS(on)

• High power and current handling capability in awidely used surface mount package

Description

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications.