FDT86113LZ Series

N-Channel PowerTrench® MOSFET 100V, 3.3A, 100mΩ

Catalog

N-Channel PowerTrench® MOSFET 100V, 3.3A, 100mΩ

Part	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)	Vgs (Max)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDT86113LZ	Surface Mount	MOSFET (Metal Oxide)	100 V	TO-261-4 TO-261AA	4.5 V 10 V	-55 °C	150 °C	6.8 nC	2.5 V	315 pF	100 mOhm	N-Channel	2.2 W	20 V	SOT-223-4	3.3 A

Catalog

N-Channel PowerTrench® MOSFET 100V, 3.3A, 100mΩ

Key Features

• Max rDS(on)= 100 mΩ at VGS= 10 V, ID= 3.3 A

• Max rDS(on)= 145 mΩ at VGS= 4.5 V, ID= 2.7 A

• High performance trench technology for extremely low rDS(on)

• High power and current handling capability in a widely usedsurface mount package

• HBM ESD protection level > 3 KV typical (Note 4)

• 100% UIL tested

• RoHS Compliant

Description

This N-Channel logic Level MOSFETs are produced using an advanced Power Trench®process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.