FDT86246L Series

N-Channel PowerTrench® MOSFET 150V, 1.2A, 845mΩ

Catalog

N-Channel PowerTrench® MOSFET 150V, 1.2A, 845mΩ

Part	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Mounting Type
ON Semiconductor FDT86246L	20 V	SOT-223-4	6.3 nC	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	2 A	4.5 V 10 V	TO-261-4 TO-261AA	150 V	2.5 V	335 pF	228 mOhm	1 W	Surface Mount
ON Semiconductor FDT86256	20 V	SOT-223-4	2 nC	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	1.2 A 3 A	6 V 10 V	TO-261-4 TO-261AA	150 V	4 V	73 pF	845 mOhm	2.3 W 10 W	Surface Mount
ON Semiconductor FDT86246	20 V	SOT-223-4	4 nC	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	2 A	6 V 10 V	TO-261-4 TO-261AA	150 V	4 V	215 pF	236 mOhm	2.2 W	Surface Mount

Catalog

N-Channel PowerTrench® MOSFET 150V, 1.2A, 845mΩ

Key Features

• Max rDS(on)= 228 mΩ at VGS= 10 V, ID= 2 A

• Max rDS(on)= 280 mΩ at VGS= 4.5 V, ID= 1.8 A

• High performance trench technology for extremely low rDS(on)

• High power and current handling capability in a widely usedsurface mount package

• Fast switching speed

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.