Beta

⌘K

O

ON Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(10272)

...

Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

FDML7610	Arrays	3	Active
FDMQ8403N-Channel PowerTrench<sup>®</sup> MOSFET GreenBridge™ Series of High-Efficiency Bridge Rectifiers 100V, 6A, 110mΩ	Transistors	1	Active	This quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge.
FDMQ86530LN-Channel PowerTrench® MOSFET, GreenBridge™ Series of High-Efficiency Bridge Rectifiers 60V, 8A, 17.5mΩ	Transistors	1	Active	This Quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge.
FDMS001N025DSD25 V Asymmetric Dual N−Channel PowerTrench<sup>®</sup> Power Clip MOSFET	Transistors	1	Obsolete	This device includes two specialized N−Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
FDMS003N08CN-Channel Shielded Gate PowerTrench<sup>®</sup> MOSFET 80 V, 147 A, 3.1 mΩ	FETs, MOSFETs	1	Active	This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
FDMS004N08CN-Channel Shielded Gate PowerTrench<sup>®</sup> MOSFET 80V, 126A, 4.0mΩ	FETs, MOSFETs	1	Active	This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology.This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
FDMS015N04BN-Channel PowerTrench<sup>®</sup> MOSFET 40V, 100A, 1.5mΩ	Single	1	LTB	This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
FDMS0300SN-Channel PowerTrench<sup>®</sup> SyncFET™ 30V, 49A, 1.8mΩ	Single FETs, MOSFETs	1	Active	The FDMS0300S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
FDMS0306ASN-Channel PowerTrench<sup>®</sup> SyncFET™ 30V, 49A, 2.4mΩ	Discrete Semiconductor Products	1	Active	The FDMS0306AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
FDMS0308ASN-Channel PowerTrench<sup>®</sup> SyncFET™ 30V, 49A, 2.8mΩ	Discrete Semiconductor Products	1	Active	The FDMS0308AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.