FDMS0306AS Series

N-Channel PowerTrench® SyncFET™ 30V, 49A, 2.4mΩ

Catalog

N-Channel PowerTrench® SyncFET™ 30V, 49A, 2.4mΩ

Part	Vgs (Max)	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDMS0306AS	20 V	8-PQFN (5x6)	MOSFET (Metal Oxide)	-55 °C	150 °C	N-Channel	57 nC	2.5 W 59 W	30 V	8-PowerTDFN	Surface Mount	26 A 49 A	3550 pF	2.4 mOhm	3 V	4.5 V 10 V

Catalog

N-Channel PowerTrench® SyncFET™ 30V, 49A, 2.4mΩ

Key Features

• Max rDS(on)= 2.4 mΩ at VGS= 10 V, ID= 26 A

• Max rDS(on)= 3.0 mΩ at VGS= 4.5 V, ID= 23 A

• Advanced Package and Silicon Combination for Low rDS(on)and High Efficiency

• SyncFET Schottky Body Diode

• MSL1 Robust Package Design

• 100% UIL Tested

• RoHS Compliant

Description

The FDMS0306AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.