FDMS001N025DSD Series

25 V Asymmetric Dual N−Channel PowerTrench® Power Clip MOSFET

Catalog

25 V Asymmetric Dual N−Channel PowerTrench® Power Clip MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Supplier Device Package	Technology
ON Semiconductor FDMS001N025DSD	-55 °C	150 °C	8-PowerWDFN	2 N-Channel (Dual) Asymmetrical	1370 pF 5105 pF	2.1 W 2.3 W 26 W 42 W	0.92 mOhm 3.25 mOhm	25 V	2.5 V 3 V	19 A 38 A 69 A 165 A	30 nC	104 nC	Surface Mount	8-PQFN (5x6)	MOSFET (Metal Oxide)

Catalog

25 V Asymmetric Dual N−Channel PowerTrench® Power Clip MOSFET

Key Features

• Q1: N−ChannelMAX rDS(on)= 3.25 mΩ at VGS= 10 V, ID= 19 AMAX rDS(on)= 4 mΩ at VGS= 4.5 V, ID= 17 A

• Q2: N−ChannelMax rDS(on)= 0.92 mΩ at VGS= 10 V, ID= 38 AMAX rDS(on)= 1.20 mΩ at VGS= 4.5 V, ID= 34 A

• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses

• MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing

• RoHS Compliant

Description

This device includes two specialized N−Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.