FDMS004N08C Series

N-Channel Shielded Gate PowerTrench® MOSFET 80V, 126A, 4.0mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 80V, 126A, 4.0mΩ

Part	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDMS004N08C	8-PowerTDFN	4 mOhm	80 V	4250 pF	N-Channel	4 V	55 nC	125 W	6 V 10 V	126 A	8-PQFN (5x6) Power56	Surface Mount	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 80V, 126A, 4.0mΩ

Key Features

• Shielded Gate MOSFET Technology

• Max rDS(on)= 4.0 mΩ at VGS= 10 V, ID= 44 A

• Max rDS(on)= 10.4 mΩ at VGS= 6 V, ID= 22 A

• 50% Lower Qrrthan Other MOSFET Suppliers

• Lowers Switching Noise/EMI

• MSL1 Robust Package Design

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology.This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.