FDMS003N08C Series

N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 147 A, 3.1 mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 147 A, 3.1 mΩ

Part	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [x]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]
ON Semiconductor FDMS003N08C	2.7 W 125 W	20 V	5350 pF	6 V 10 V	73 nC	3.1 mOhm	Power56	-55 °C	150 °C	N-Channel	8-PowerTDFN	22 A 147 A	Surface Mount	MOSFET (Metal Oxide)	80 V	4 V

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 147 A, 3.1 mΩ

Key Features

• Low RDS(on)and Qg

• Very Low Qrr

• Lowers switching noise / EMI

• 100% UIL tested

Description

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.