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ON Semiconductor

Series List(12147)

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Series	Category	# Parts	Status	Description

Standalone parts(10272)

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Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

AFGHL30T65RQDNIGBT - 650 V 30 A - Short circuit rated FS4 - Automotive qualified	IGBTs	1	Active	IGBT - 650 V 30 A - Short circuit rated FS4 - Automotive qualified
AFGHL40T120RLDAEC 101 Qualified, 650V, 40A Fieldstop 4 trench IGBT Stand alone IGBT without co-pack DIODE	Discrete Semiconductor Products	5	Active	AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in automotive application.
AFGHL40T120RW-STDIGBT - Automotive Grade 1200 V 40A	Discrete Semiconductor Products	1	Active	AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides good performance in demanding switching applications, offering both low on state voltage and low switching loss offers good performance for both hard and soft switching topology in automotive application.
AFGHL40T120RWDIGBT - Automotive Grade 1200 V 40 A	IGBTs	1	Active	AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in automotive application.
AFGHL40T120RWD-STDIGBT - Automotive Grade 1200 V 40A	Transistors	1	Active	AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides good performance in demanding switching applications, offering both low on state voltage and low switching loss offers good performance for both hard and soft switching topology in automotive application.
AFGHL50T65RQDNIGBT - 650 V 50 A - Short circuit rated FS4 - Automotive qualified	Transistors	1	Active	Using novel field stop IGBT technology, ON Semiconductor’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses.
AFGHL50T65SQDCHybrid IGBT, 650V, 50A Fieldstop 4 trench IGBT with SiC-SBD	Single IGBTs	2	Active	Using novel field stop IGBT and SiC SBD technology, ON semiconductor's new series of hybrid IGBTs offer the optimum performance for hard switching application. The device co-packages a silicon-based IGBT with a SiC Schottky barrier diode, resulting in an excellent tradeoff between the lower performance of silicon-based solutions and the higher cost of entirely SiC-based solutions.
AFGHL75T65SQDCIGBT - 650 V FS4 standalone IGBT	Discrete Semiconductor Products	2	Active	Using the novel field stop 4th generation IGBT technology and the1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDCoffers the optimum performance with both low conduction andswitching losses for high efficiency operations in various applications,especially totem pole bridgeless PFC and Inverter
AFGY100T65SPDIGBT - 650 V 100 A FS3 for EV traction inverter application	Discrete Semiconductor Products	1	Active	AFGY100T65SPD which is AEC Q101 qualified IGBT which offers very low conduction and switch losses for a high efficiency operation in various applications, rugged transient reliability and low EMI. The part also offers an advantage of outstanding parallel operation performance with balance current sharing.
AFGY120T65SPD-B4IGBT - 650V, 120A Field Stop Trench IGBT with VCESAT and VTH Binning	Single	2	Active	AFGY120T65SPD-B4 is a 650 V 120 A IGBT based on trench field stop 3 technology. This product is binned based on Vcesat and Vth i.e. the top side marking on each individual unit defines the range of Vcesat and Vth the particular device has. This allows customers to assemble units in parallel that have very close parameter distribution. This enables better current sharing in application.