AFGHL50T65RQDN Series

IGBT - 650 V 50 A - Short circuit rated FS4 - Automotive qualified

Catalog

IGBT - 650 V 50 A - Short circuit rated FS4 - Automotive qualified

Part	Vce(on) (Max) @ Vge, Ic	Mounting Type	Grade	Reverse Recovery Time (trr)	Test Condition	Current - Collector Pulsed (Icm)	Operating Temperature [Min]	Operating Temperature [Max]	IGBT Type	Gate Charge	Supplier Device Package	Power - Max [Max]	Package / Case	Qualification	Voltage - Collector Emitter Breakdown (Max)	Switching Energy	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C
ON Semiconductor AFGHL50T65RQDN	1.81 V	Through Hole	Automotive	57 ns	2.5 Ohm 15 V 50 A 400 V	200 A	-55 °C	175 ░C	Field Stop	65 nC	TO-247-3	346 W	TO-247-3	AEC-Q101	650 V	0.00083 J 3.09 mJ	78 A	41 ns 76 ns

Catalog

IGBT - 650 V 50 A - Short circuit rated FS4 - Automotive qualified

Key Features

• AEC Q101 qualified

• Maximum Junction Temperature : TJ = 175℃

• Positive Temperature Co-efficient for Easy Parallel Operating

• Tighten Parameter Distribution

• Low Saturation Voltage

• Short circuit rated

Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses.