AFGHL50T65SQDC Series

Hybrid IGBT, 650V, 50A Fieldstop 4 trench IGBT with SiC-SBD

Catalog

Hybrid IGBT, 650V, 50A Fieldstop 4 trench IGBT with SiC-SBD

Part	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Switching Energy	IGBT Type	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Gate Charge	Mounting Type	Current - Collector Pulsed (Icm)	Supplier Device Package	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Grade	Current - Collector (Ic) (Max) [Max]	Package / Case	Td (on/off) @ 25°C	Test Condition
ON Semiconductor AFGHL50T65SQDC	2.1 V	238 W	650 V	96 µJ 131 µJ	Field Stop	-55 °C	175 ░C	AEC-Q101	94 nC	Through Hole	200 A	TO-247-3	94.4 ns	17.6 ns	Automotive	100 A	TO-247-3
ON Semiconductor AFGHL50T65SQD	2.1 V	268 W	650 V	460 µJ 950 µJ	Trench Field Stop	-55 °C	175 ░C	AEC-Q101	102 nC	Through Hole	200 A	TO-247-3			Automotive	80 A	TO-247-3	20 ns 81 ns	4.7 Ohm 15 V 50 A 400 V

Catalog

Hybrid IGBT, 650V, 50A Fieldstop 4 trench IGBT with SiC-SBD

Key Features

• AEC Q101 qualified

• Maximum Junction Temperature, Tj=175°C

• Very low switching and conduction losses

• Positive temperature co-efficient

• Tight parameter distribution

• Fast Switching

• Low Saturation Voltage: Vcesat=1.6V(Typ.)@Ic=75A

• 100% of the parts are tested for ILM

Description

Using novel field stop IGBT and SiC SBD technology, ON semiconductor's new series of hybrid IGBTs offer the optimum performance for hard switching application. The device co-packages a silicon-based IGBT with a SiC Schottky barrier diode, resulting in an excellent tradeoff between the lower performance of silicon-based solutions and the higher cost of entirely SiC-based solutions.