AFGHL75T65SQDC Series

IGBT - 650 V FS4 standalone IGBT

Catalog

IGBT - 650 V FS4 standalone IGBT

Part	Qualification	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Package / Case	Td (on/off) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Test Condition	Vce(on) (Max) @ Vge, Ic	Gate Charge	Grade	Current - Collector Pulsed (Icm)	IGBT Type	Switching Energy	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Td (on/off) @ 25°C
ON Semiconductor AFGHL75T65SQ	AEC-Q101	80 A	375 W	TO-247-3	25 ns 106 ns	Through Hole	-55 °C	175 ░C	4.7 Ohm 15 V 75 A 400 V	2.1 V	139 nC	Automotive	300 A	Trench Field Stop	1.13 mJ 1.86 mJ	650 V	TO-247-3
ON Semiconductor AFGHL75T65SQDC	AEC-Q101	80 A	375 W	TO-247-3	24 ns	Through Hole	-55 °C	175 ░C	4.7 Ohm 15 V 75 A 400 V	2.1 V	139 nC	Automotive	300 A	Trench Field Stop	1.11 mJ 1.68 mJ	650 V	TO-247-3	107.2 ns

Catalog

IGBT - 650 V FS4 standalone IGBT

Key Features

• SiC schottky co-pack diode

• Fast switching IGBT

• AEC-Q101 qualified

• Tight parameter distribution and Positive temperature co-efficient

Description

Using the novel field stop 4th generation IGBT technology and the1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDCoffers the optimum performance with both low conduction andswitching losses for high efficiency operations in various applications,especially totem pole bridgeless PFC and Inverter