AFGHL40T120RLD Series

AEC 101 Qualified, 650V, 40A Fieldstop 4 trench IGBT Stand alone IGBT without co-pack DIODE

Catalog

AEC 101 Qualified, 650V, 40A Fieldstop 4 trench IGBT Stand alone IGBT without co-pack DIODE

Part	Test Condition	Switching Energy	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Qualification	Power - Max [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	Package / Case	Grade	Gate Charge	Operating Temperature [Min]	Operating Temperature [Max]	IGBT Type	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C
ON Semiconductor AFGHL40T65RQDN	2.5 Ohm 15 V 40 A 400 V	1.14 mJ 740 µJ	26 ns 77 ns	650 V	Through Hole	AEC-Q101	288 W	TO-247-3	46 A	44 ns	TO-247-3	Automotive	47 nC	-55 °C	175 ░C	Field Stop	1.82 V
ON Semiconductor AFGHL40T120RH	5 Ohm 15 V 40 A 600 V	1.2 mJ 3.7 mJ			Through Hole	AEC-Q101	400 W	TO-247-3		195 ns	TO-247-3	Automotive	277 nC	-55 °C	175 ░C	Trench Field Stop	2.4 V	37 ns 150 ns
ON Semiconductor AFGHL40T120RL	5 Ohm 15 V 40 A 600 V	1.2 mJ 3.4 mJ	48 ns 208 ns		Through Hole	AEC-Q101	529 W	TO-247-3		195 ns	TO-247-3	Automotive	395 nC	-55 °C	175 ░C	Trench Field Stop	2.1 V
ON Semiconductor AFGHL40T120RLD	5 Ohm 15 V 40 A 600 V	1.2 mJ 3.4 mJ	48 ns 208 ns		Through Hole		529 W	TO-247-3		195 ns	TO-247-3		395 nC	-55 °C	175 ░C	Trench Field Stop	2.1 V		1200 V
ON Semiconductor AFGHL40T65SQ	6 Ohm 15 V 20 A 400 V	90 µJ 250 µJ	15 ns	650 V	Through Hole	AEC-Q101		TO-247-3	80 A		TO-247-3	Automotive	68 nC	-55 °C	175 ░C	Trench Field Stop	2.1 V			70 ns

Catalog

AEC 101 Qualified, 650V, 40A Fieldstop 4 trench IGBT Stand alone IGBT without co-pack DIODE

Key Features

• AEC Q101 qualified

• Maximum Junction Temperature, Tj=175°C

• Very low switching and conduction losses

• Positive temperature co-efficient

• Tight parameter distribution

• Fast Switching

• Low Saturation Voltage: Vcesat=1.6V(Typ.)@Ic=75A

• 100% of the parts are tested for ILM

Description

AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in automotive application.