AFGY120T65SPD-B4 Series

IGBT - 650V, 120A Field Stop Trench IGBT with VCESAT and VTH Binning

Catalog

IGBT - 650V, 120A Field Stop Trench IGBT with VCESAT and VTH Binning

Part	Qualification	Current - Collector Pulsed (Icm)	Grade	Voltage - Collector Emitter Breakdown (Max)	Gate Charge	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Reverse Recovery Time (trr)	Operating Temperature [Min]	Operating Temperature [Max]	IGBT Type	Test Condition	Power - Max [Max]	Switching Energy	Td (on/off) @ 25°C	Mounting Type	Package / Case	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic
ON Semiconductor AFGY120T65SPD	AEC-Q101	360 A	Automotive	650 V	125 nC	160 A	TO-247-3	107 ns	-55 °C	175 ░C	Trench Field Stop	5 Ohm 15 V 120 A 400 V	714 W	3.8 mJ 6.6 mJ	40 ns 80 ns	Through Hole	TO-247-3
ON Semiconductor AFGY120T65SPD-B4		378 A		650 V	243 nC	240 A	TO-247-3	123 ns	-55 °C	175 ░C	Trench Field Stop	5 Ohm 15 V 120 A 400 V	882 W	3.5 mJ 6.8 mJ		Through Hole	TO-247-3	53 ns 102 ns	1.85 V

Catalog

IGBT - 650V, 120A Field Stop Trench IGBT with VCESAT and VTH Binning

Key Features

• Vcesat and Vth Binning

• Automotive Qualified

• Very Low Saturation Voltage : VCE(sat)= 1.5 V(Typ.) @ IC= 120 A

• Maximum Junction Temperature: TJ= 175°C

• Positive Temperature Co-efficient

• Tight Parameter Distribution

• High Input Impedance

• 100% of the Parts are Dynamically Tested

• Short circuit ruggedness > 6μs @ 25oC

• Copacked with Soft, Fast Recovery Extremefast Diode

• This Device is Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

Description

AFGY120T65SPD-B4 is a 650 V 120 A IGBT based on trench field stop 3 technology. This product is binned based on Vcesat and Vth i.e. the top side marking on each individual unit defines the range of Vcesat and Vth the particular device has. This allows customers to assemble units in parallel that have very close parameter distribution. This enables better current sharing in application.