NVHL060N065SC1 Series

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60mohm, 650 V, M2, TO247-3L

Catalog

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60mohm, 650 V, M2, TO247-3L

Part	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Grade	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Qualification
ON Semiconductor NVHL060N065SC1	Through Hole	N-Channel	74 nC	70 mOhm	47 A	1473 pF	650 V	TO-247-3	15 V 18 V	176 W	Automotive	MOSFET (Metal Oxide)	TO-247-3	-55 °C	175 ░C	4.3 V	AEC-Q101

Catalog

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60mohm, 650 V, M2, TO247-3L

Key Features

• Qualified for Automotive According to AEC−Q101

• 650V rated

• Max RDS(on) = 18 mΩ at Vgs = 18V, Id = 75A

• High Speed Switching and Low Capacitance

• 100% UIL Tested

• Devices are RoHS Compliant

Description

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.