NVHL040N120SC1 Series

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−3L

Catalog

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−3L

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Qualification	Package / Case	Rds On (Max) @ Id, Vgs	Grade	Vgs (Max) [Min]	Vgs (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NVHL040N120SC1	106 nC	TO-247-3	1781 pF	1200 V	4.3 V	348 W	Through Hole	60 A	N-Channel	AEC-Q101	TO-247-3	56 mOhm	Automotive	-15 V	25 V	-55 °C	175 ░C

Catalog

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, TO247−3L

Key Features

• Max RDS(on) = xxmΩ at Vgs = 20V, Id = 20A

• Qualified for Automotive According to AEC−Q101

• High Speed Switching and Low Capacitance

• Devices are Pb−Free and are RoHS Compliant

Description

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.