NVHL027N65S3F Series

Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 75 A, 27.4 mΩ, TO-247

Catalog

Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 75 A, 27.4 mΩ, TO-247

Part	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id [Max]	Mounting Type	Grade	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	FET Type
ON Semiconductor NVHL027N65S3F	MOSFET (Metal Oxide)	650 V	30 V	595 W	10 V	5 V	Through Hole	Automotive	7780 pF	TO-247-3	227 nC	-55 °C	150 °C	AEC-Q101	75 A	27.4 mOhm	TO-247-3	N-Channel

Catalog

Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 75 A, 27.4 mΩ, TO-247

Key Features

• Best in body diode

• Internal Rg

• Lower RDS (ON)/ Same Packages

• Lower FOM (RDS (ON) maxX QG typ& RDS (ON) maxX EOSS

• Internal Zener / 640 BS dss

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.