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ON Semiconductor

Series List(12147)

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Series	Category	# Parts	Status	Description

Standalone parts(10272)

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Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

NTHL160N120SC1Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L	Transistors	1	Active	Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
NTHL185N60S5HPower MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 15 A, 185 mΩ, TO-247	Transistors	1	Active	The SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns. Consequently, the SUPERFET V MOSFET FAST series helps maximize system efficiency and power density.
NTHLD040N65S3HFPower MOSFET, N-Channel, SUPERFET<sup>®</sup> III, FRFET<sup>®</sup>, 650 V, 65 A, 40 mΩ, TO-247AD	Single	1	Obsolete	SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.
NTHS2101PPower MOSFET 8V 7.5A 25 mOhm Single P-Channel ChipFET	Transistors	1	Obsolete	Power MOSFET -8 V, -7.5 A, Single P-Channel ChipFET™
NTHS54	FETs, MOSFETs	1	Obsolete
NTHS5404Single N-Channel ChipFET™ Power MOSFET 20V 7.2A 30mΩ	Single FETs, MOSFETs	1	Obsolete	Power MOSFET 20 V, 7.2 A, N-Channel ChipFET™
NTJD1155LDual P-Channel High Side Load Switch with Level-Shift Power MOSFET -8V ±1.3A 175mΩ	FET, MOSFET Arrays	2	Active	The NTJD1155L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. TheP-Channel device is specifically designed as a load switch using ON Semiconductor state-of-the-art trench technology. The N-Channel, with an external resistor (R1), functions as a level-shift to drive the P-Channel. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTJD1155L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both VINand VON/OFF.
NTJD3158CSmall Signal MOSFET 20V 630mA 375 mOhm Dual Complementary SC−88/SC70−6/SOT−363	Transistors	1	Obsolete	Power MOSFET, 20V, +0.63/-0.82A, SC-88 Complementary
NTJD4001NDual N-Channel Small Signal MOSFET 30V 250mA 1.5Ω	FET, MOSFET Arrays	1	Obsolete	Small Signal MOSFET 30 V, 250 mA, Dual N - Channel, SC - 88
NTJD4105CComplementary Small Signal MOSFET	FET, MOSFET Arrays	3	Active	This complementary dual device was designed with a small package (2 x 2 mm) and low RDS(on)MOSFETs for minimum footprint and increased circuit efficiency. The low RDS(on)performance is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras, and PDAs.