NTHL185N60S5H Series

Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 15 A, 185 mΩ, TO-247

Catalog

Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 15 A, 185 mΩ, TO-247

Part	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Technology	FET Type	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTHL185N60S5H	4.3 V	Through Hole	-55 °C	150 °C	600 V	25 nC	30 V	MOSFET (Metal Oxide)	N-Channel	TO-247-3	TO-247-3	10 V	185 mOhm	1350 pF	116 W	15 A

Catalog

Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 15 A, 185 mΩ, TO-247

Key Features

• Ultra Low Gate Charge (Typ. Qg = 25 nC)

• Low Time Related Output Capacitance (Typ. COSS(tr.)= 372 pF)

• Fast switching performance with robust body diode

• 650 V @ TJ = 150°C

• Typ. RDS(on) = 148 m Ω

• 100% Avalanche Tested

• RoHS Compliant

• Internal Gate Resistance: 0.9 Ω

Description

The SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns. Consequently, the SUPERFET V MOSFET FAST series helps maximize system efficiency and power density.