NTJD1155L Series

Dual P-Channel High Side Load Switch with Level-Shift Power MOSFET -8V ±1.3A 175mΩ

Catalog

Dual P-Channel High Side Load Switch with Level-Shift Power MOSFET -8V ±1.3A 175mΩ

Part	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Configuration	Power - Max [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTJD1155LT2G	6-TSSOP SC-88 SOT-363	Surface Mount	8 V	-55 °C	150 °C	SC-88 SC70-6 SOT-363	MOSFET (Metal Oxide)	N and P-Channel	400 mW	1 V	175 mOhm
ON Semiconductor NTJD1155LT1G	6-TSSOP SC-88 SOT-363	Surface Mount	8 V	-55 °C	150 °C	SC-88 SC70-6 SOT-363	MOSFET (Metal Oxide)	N and P-Channel	400 mW	1 V	175 mOhm	1.3 A

Catalog

Dual P-Channel High Side Load Switch with Level-Shift Power MOSFET -8V ±1.3A 175mΩ

Key Features

• Extremely Low RDS(on)P-Channel Load Switch MOSFET

• Level Shift MOSFET is ESD Protected

• Low Profile, Small Footprint Package

• VINRange 1.8 to 8.0 V

• ON/OFF Range 1.5 to 8.0 V

Description

The NTJD1155L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. TheP-Channel device is specifically designed as a load switch using ON Semiconductor state-of-the-art trench technology. The N-Channel, with an external resistor (R1), functions as a level-shift to drive the P-Channel. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTJD1155L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both VINand VON/OFF.