NTJD4105C Series

Complementary Small Signal MOSFET

Catalog

Complementary Small Signal MOSFET

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Feature	Mounting Type	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTJD4105CT1G	375 mOhm	8 V 20 V	Logic Level Gate	Surface Mount	N and P-Channel	-55 °C	150 °C	1.5 V	MOSFET (Metal Oxide)	46 pF	6-TSSOP SC-88 SOT-363	3 nC	SC-88 SC70-6 SOT-363	270 mW	630 mA 775 mA
ON Semiconductor NTJD4105CT4G	375 mOhm	8 V 20 V	Logic Level Gate	Surface Mount	N and P-Channel	-55 °C	150 °C	1.5 V	MOSFET (Metal Oxide)	46 pF	6-TSSOP SC-88 SOT-363	3 nC	SC-88 SC70-6 SOT-363	270 mW	630 mA 775 mA
ON Semiconductor NTJD4105CT2	375 mOhm	8 V 20 V	Logic Level Gate	Surface Mount	N and P-Channel	-55 °C	150 °C	1.5 V	MOSFET (Metal Oxide)	46 pF	6-TSSOP SC-88 SOT-363	3 nC	SC-88 SC70-6 SOT-363	270 mW	630 mA 775 mA

Catalog

Complementary Small Signal MOSFET

Key Features

• Complementary N and P Channel Device

• Leading -8.0 V Trench for Low RDS(on)Performance

• ESD Protected Gate-ESD Rating: Class 1

• SC-88 Package for Small Footprint (2x2mm)

Description

This complementary dual device was designed with a small package (2 x 2 mm) and low RDS(on)MOSFETs for minimum footprint and increased circuit efficiency. The low RDS(on)performance is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras, and PDAs.