NTHL160N120SC1 Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L

Part	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]
ON Semiconductor NTHL160N120SC1	119 W	1200 V	Through Hole	17 A	4.3 V	224 mOhm	N-Channel	TO-247-3	-55 °C	175 ░C	TO-247-3	665 pF	34 nC	-15 V	25 V

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L

Key Features

• High Speed Switching and Low Capacitance

• Max RDS(on) = 224mΩ at Vgs = 20V, Id = 12A

• 1200V

• 100% UIL Tested

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.