NTHS2101P Series

Power MOSFET 8V 7.5A 25 mOhm Single P-Channel ChipFET

Catalog

Power MOSFET 8V 7.5A 25 mOhm Single P-Channel ChipFET

Part	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)
ON Semiconductor NTHS2101PT1	1.3 W	MOSFET (Metal Oxide)	1.5 V	1.8 V 4.5 V	2400 pF	P-Channel	Surface Mount	5.4 A	30 nC	ChipFET™	25 mOhm	8 V	8 V

Power MOSFET 8V 7.5A 25 mOhm Single P-Channel ChipFET

• Offers an Ultra Low RDS(on)Solution in the ChipFET™

• Miniature ChipFET™ Package 40% Smaller Footprint than TSOP-6 making it an Ideal Device for Applications where Board Space is at a Premium

• Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics.

• Designed to Provide Low RDS(on)at Gate Voltage, as low as 1.8V. The operating voltage used in many Logic ICs in Portable Electronics

• Simplifies Circuit Design, since additional Boost Circuits for Gate Voltages are not required.

• Operates at Standard Logic Level Gate Drive, Facilitates Future Migration to lower levels using the same Basic Topology

• Pb-Free Package is Available

Power MOSFET -8 V, -7.5 A, Single P-Channel ChipFET™