PSMN3R2-40YLB Series

N-channel 40 V, 3.3 mOhm, 120 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

Catalog

N-channel 40 V, 3.3 mOhm, 120 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)
Nexperia USA Inc. PSMN3R2-40YLBX	3.3 mOhm	59 nC	LFPAK56 Power-SO8	Surface Mount	120 A	Schottky Diode (Body)	4211 pF	2.05 V	SC-100 SOT-669	20 V	MOSFET (Metal Oxide)	175 °C	-55 °C	4.5 V 10 V	N-Channel	115 W	40 V

Catalog

N-channel 40 V, 3.3 mOhm, 120 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

Description

120 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications.