PSMN2R8-40YSB Series

N-channel 40 V, 2.8 mOhm, 160 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

Catalog

N-channel 40 V, 2.8 mOhm, 160 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	FET Feature	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Power Dissipation (Max) [Max]
Nexperia USA Inc. PSMN2R8-40YSBX	160 A	2.8 mOhm	20 V	59 nC	175 °C	-55 °C	4563 pF	3.6 V	Schottky Diode (Body)	LFPAK56 Power-SO8	10 V	N-Channel	SC-100 SOT-669	40 V	Surface Mount	MOSFET (Metal Oxide)	147 W

Catalog

N-channel 40 V, 2.8 mOhm, 160 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

Description

160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications.