PSMN2R4-30MLD Series

N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

Catalog

N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

Part	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Mounting Type	Supplier Device Package
Nexperia USA Inc. PSMN2R4-30MLDX	20 V	MOSFET (Metal Oxide)	70 A	51 nC	2.2 V	2.4 mOhm	175 °C	-55 °C	4.5 V 10 V	30 V	3264 pF	N-Channel	Surface Mount	LFPAK33

Catalog

N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

Description

Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia’s unique "SchottkyPlus" technology, delivers high efficiency and the low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like body diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.