PSMN2R5-40YLD Series

N-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Catalog

N-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Part	Package / Case	FET Feature	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]
Nexperia USA Inc. PSMN2R5-40YLDX	SC-100 SOT-669	Schottky Diode (Body)	2.05 V	147 W	175 °C	-55 °C	5583 pF	Surface Mount	LFPAK56 Power-SO8	N-Channel	40 V	20 V	4.5 V 10 V	160 A	2.6 mOhm	MOSFET (Metal Oxide)	78 nC

Catalog

N-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Description

160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.