PSMN1 Series
Manufacturer: Freescale Semiconductor - NXP
PSMN1R6-25YLE/SOT669/LFPAK
| Part | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Mounting Type | Supplier Device Package | FET Type | Technology | Rds On (Max) @ Id, Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Freescale Semiconductor - NXP | 3698 pF | SC-100 SOT-669 | 124 W | 2.2 V | 61 nC | -55 °C | 175 ░C | 20 V | Surface Mount | LFPAK56 Power-SO8 | N-Channel | MOSFET (Metal Oxide) | 1.88 mOhm | 185 A | 25 V | ||||
Freescale Semiconductor - NXP | 6317 pF | SC-100 SOT-669 | -55 °C | 175 ░C | 20 V | Surface Mount | LFPAK56 Power-SO8 | N-Channel | MOSFET (Metal Oxide) | 265 A | 30 V | 192 W | 1.26 mOhm | 102 nC | 2.2 V |