PSMN071-100NSE Series

N-channel 100 V, 82 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacement

Manufacturer: Nexperia USA Inc.

Catalog

N-channel 100 V, 82 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacement

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Package / Case	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Nexperia USA Inc. PSMN071-100NSEX	3.6 V	559 pF	10 V	31 W	Surface Mount	175 °C	-55 °C	MOSFET (Metal Oxide)	6-UDFN Exposed Pad	N-Channel	DFN2020M-6	100 V	82.3 mOhm	20 V	9.5 nC

Catalog

N-channel 100 V, 82 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacement

Description

New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90 W to each powered device (PD). Such solutions place increased demands on the power sourcing equipment (PSE) in terms of "soft-start", thermal management and power density requirements. These ASFETs combine enhanced SOA in a compact 2 mm x 2 mm footprint making them ideally placed for a variety of applications including PoE, eFuse and relay replacement.