Beta

⌘K

N

Nexperia USA Inc.

Series List(9390)

...

...

Series	Category	# Parts	Status	Description

Standalone parts(5568)

...

Part	Category	Description
Nexperia USA Inc. PBSS4350X-QZ	Discrete Semiconductor Products	TRANSISTOR GP BJT NPN 50V 3A 3-PIN SOT-89 T/R
Nexperia USA Inc. PDTD143XT-QR	Discrete Semiconductor Products	PDTD143XT-Q/SOT23/TO-236AB
Nexperia USA Inc. BAV99/DG/B3,235Obsolete	Discrete Semiconductor Products	DIODE ARRAY GEN PURP 100V 215MA
Nexperia USA Inc. 74HCS21PW-Q100J	Integrated Circuits (ICs)	74HCS21PW-Q100/SOT402/TSSOP14
Nexperia USA Inc. PMCB60XNEAYL	Discrete Semiconductor Products	SMALL SIGNAL MOSFET FOR MOBILE
Nexperia USA Inc. LD6836TD/13P,125Obsolete	Integrated Circuits (ICs)	IC REG LINEAR 1.3V 300MA 5-TSOP
Nexperia USA Inc. 74HC688PW,112Obsolete	Integrated Circuits (ICs)	IC ID COMPARATOR 8BIT 20-TSSOP
Nexperia USA Inc. PDZ6.2B-QZ	Discrete Semiconductor Products	DIODE ZENER 6.2V 400MW SOD323
Nexperia USA Inc. BUK4D38-20PH	Discrete Semiconductor Products	SMALL SIGNAL MOSFETS FOR AUTOMOT
Nexperia USA Inc. 74ALVT16373DGG,512Obsolete	Integrated Circuits (ICs)	IC D-TYPE TRANSP 8:8 48-TSSOP

Series	Category	# Parts	Status	Description

PSC0665K650 V, 6 A SiC Schottky diode in TO-220-2 R2P	Discrete Semiconductor Products	1	Active	Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 through-hole power plastic package. The product offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
PSC1065B1650 V, 10 A SiC Schottky diode in bare die	Discrete Semiconductor Products	1	Active	Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF) and improves the robustness expressed in a high IFSM.
PSC1065B1-Q650 V, 10 A SiC Schottky diode in bare die for automotive applications	Discrete Semiconductor Products	1	Active	Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF) and improves the robustness expressed in a high IFSM.
PSC1065H650 V, 10 A SiC Schottky diode in DPAK R2P	Single Diodes	1	Active	Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
PSC1065H-Q650 V, 10 A SiC Schottky diode in DPAK R2P for automotive applications	Single Diodes	1	Active	Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
PSC1065J-Q650 V, 10 A SiC Schottky diode in D2PAK R2P for automotive applications	Discrete Semiconductor Products	1	Active	Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
PSC1065K650 V, 10 A SiC Schottky diode in TO-220-2 R2P	Discrete Semiconductor Products	1	Active	Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 (SOT8021) through-hole power plastic package. The product offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
PSC1665J650 V, 16 A SiC Schottky diode in D2PAK R2P	Rectifiers	1	Active	Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
PSC1665J-Q650 V, 16 A SiC Schottky diode in D2PAK R2P for automotive applications	Rectifiers	1	Active	Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
PSC1665L650 V, 16 A SiC Schottky diode in TO247 R2P	Single Diodes	1	Active	Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.