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Nexperia USA Inc.
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
Nexperia USA Inc. | Discrete Semiconductor Products | TRANSISTOR GP BJT NPN 50V 3A 3-PIN SOT-89 T/R |
Nexperia USA Inc. | Discrete Semiconductor Products | PDTD143XT-Q/SOT23/TO-236AB |
Nexperia USA Inc. BAV99/DG/B3,235Obsolete | Discrete Semiconductor Products | DIODE ARRAY GEN PURP 100V 215MA |
Nexperia USA Inc. | Integrated Circuits (ICs) | 74HCS21PW-Q100/SOT402/TSSOP14 |
Nexperia USA Inc. | Discrete Semiconductor Products | SMALL SIGNAL MOSFET FOR MOBILE |
Nexperia USA Inc. LD6836TD/13P,125Obsolete | Integrated Circuits (ICs) | IC REG LINEAR 1.3V 300MA 5-TSOP |
Nexperia USA Inc. 74HC688PW,112Obsolete | Integrated Circuits (ICs) | IC ID COMPARATOR 8BIT 20-TSSOP |
Nexperia USA Inc. | Discrete Semiconductor Products | DIODE ZENER 6.2V 400MW SOD323 |
Nexperia USA Inc. | Discrete Semiconductor Products | SMALL SIGNAL MOSFETS FOR AUTOMOT |
Nexperia USA Inc. 74ALVT16373DGG,512Obsolete | Integrated Circuits (ICs) | IC D-TYPE TRANSP 8:8 48-TSSOP |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Transistors | 1 | Active | ||
| Transistors | 1 | Active | ||
| Bipolar (BJT) | 1 | Active | ||
PRMH950 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET) | Bipolar Transistor Arrays, Pre-Biased | 1 | Active | NPN/NPN Resistor-Equipped double Transistors (RET) in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. |
PRTR5V0U2Ultra low capacitance double rail-to-rail ESD protection diode | Circuit Protection | 7 | Active | Ultra low capacitance rail-to-rail ElectroStatic Discharge (ESD) protection diode in a small SOT143B Surface-Mounted Device (SMD) plastic package designed to protect two Hi-Speed data lines or high-frequency signal lines from the damage caused by ESD and other transients. |
PRTR5V0U2X-QUltra low capacitance double rail-to-rail ESD protection diode | TVS Diodes | 1 | Active | Ultra low capacitance rail-to-rail ElectroStatic Discharge (ESD) protection diode in a small SOT143B Surface-Mounted Device (SMD) plastic package designed to protect two Hi-Speed data lines or high-frequency signal lines from the damage caused by ESD and other transients. |
PRTR5V0U4Ultra low capacitance quadruple rail-to-rail ESD protection | Transient Voltage Suppressors (TVS) | 2 | Active | Ultra low capacitance quadruple rail-to-rail ElectroStatic Discharge (ESD) protection device in an SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. |
PRTR5V0U4D-QUltra low capacitance quadruple rail-to-rail ESD protection | Circuit Protection | 1 | Active | Ultra low capacitance quadruple rail-to-rail ElectroStatic Discharge (ESD) protection device in an SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. |
PSC0665B1650 V, 6 A SiC Schottky diode in bare die | Discrete Semiconductor Products | 1 | Active | Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF) and improves the robustness expressed in a high IFSM. |
PSC0665H650 V, 6 A SiC Schottky diode in DPAK R2P | Discrete Semiconductor Products | 1 | Active | Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin DPAK R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM. |