PSC1065H Series

650 V, 10 A SiC Schottky diode in DPAK R2P

Catalog

650 V, 10 A SiC Schottky diode in DPAK R2P

Part	Mounting Type	Speed	Reverse Recovery Time (trr)	Package / Case	Current - Average Rectified (Io)	Operating Temperature - Junction	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Technology
Nexperia USA Inc. PSC1065HJ	Surface Mount	500 mA	0 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 A	175 °C	60 µA	650 V	TO-252-2	1.8 V	36 pF	SiC (Silicon Carbide) Schottky

Catalog

650 V, 10 A SiC Schottky diode in DPAK R2P

Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.