PSC1665J-Q Series

650 V, 16 A SiC Schottky diode in D2PAK R2P for automotive applications

Catalog

650 V, 16 A SiC Schottky diode in D2PAK R2P for automotive applications

Part	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Grade	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Voltage - Forward (Vf) (Max) @ If [Max]	Qualification	Reverse Recovery Time (trr)	Operating Temperature - Junction	Current - Reverse Leakage @ Vr	Mounting Type	Capacitance @ Vr, F	Speed	Technology
Nexperia USA Inc. PSC1665J-QJ	D2PAK R2P	650 V	TO-263-3 D2PAK (2 Leads + Tab) Variant	Automotive	16 A	16 A	1.8 V	AEC-Q101	0 ns	175 °C	180 µA	Surface Mount	475 pF	500 mA	SiC (Silicon Carbide) Schottky

Catalog

650 V, 16 A SiC Schottky diode in D2PAK R2P for automotive applications

Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.