PSC1065K Series

650 V, 10 A SiC Schottky diode in TO-220-2 R2P

Catalog

650 V, 10 A SiC Schottky diode in TO-220-2 R2P

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Supplier Device Package	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Operating Temperature - Junction	Speed	Technology	Voltage - Forward (Vf) (Max) @ If	Package / Case
Nexperia USA Inc. PSC1065KQ	650 V	340 pF	TO-220-2	10 A	Through Hole	60 µA	0 ns	175 °C	500 mA	SiC (Silicon Carbide) Schottky	1.8 V	TO-220-2

Catalog

650 V, 10 A SiC Schottky diode in TO-220-2 R2P

Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 (SOT8021) through-hole power plastic package. The product offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.